丝印：HY1506P；Package：TO220-3L；N-Channel Enhancement Mode MOSFET

Features · V/ 5A, RDS(ON) =10.5 mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

文件：919.74 Kbytes 页数：10 Pages

HOOYI

后羿半导体

丝印：HY1506P；Package：TO220-3L；N-Channel Enhancement Mode MOSFET

Features · V/ 5A, RDS(ON) =10.5 mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

文件：919.74 Kbytes 页数：10 Pages

HOOYI

后羿半导体

丝印：HY1506；Package：TO-220FB-3L；N-Channel Enhancement Mode MOSFET

文件：584 Kbytes 页数：12 Pages

HUAYI

华羿微电

50A,60V Heatsink Planar N-Channel Power MOSFET

文件：1.45994 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体