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5N60L

4.5Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC5N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplication

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

5N60P

N-CHANNELPOWERMOSFET

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

5N60T

N-CHANNELPOWERMOSFET

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

5N60Z

5A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

AOT5N60

600V,5AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT5N60

600V,5AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT5N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BLV5N60

N-channelEnhancementModePowerMOSFET

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

BRD5N60

N-CHANNELMOSFETinaTO-252PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

BRF5N60

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FCD5N60

600VN-ChannelMOSFET

Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD5N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.6A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCD5N60TF

600VN-ChannelMOSFET

Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD5N60TM

600VN-ChannelMOSFET

Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD5N60TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD5N60TM-WS

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCU5N60

600VN-ChannelMOSFET

Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCU5N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.6A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCU5N60TU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD5N60NZ

N-ChannelUniFETIIMOSFET600V,4.0A,2Ohm

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
23+
N/A
45880
正品授权货源可靠
询价
Sino
23+
TO-252
37650
全新原装真实库存含13点增值税票!
询价
SINO
23+
TO-252
10000
公司只做原装正品
询价
Sino
TO-252
22+
6000
十年配单,只做原装
询价
Sino
23+
TO-252
6000
原装正品,支持实单
询价
ixys
2023+
TO-252
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
Sino
22+
TO-252
25000
只做原装进口现货,专注配单
询价
HUAWEI
24+25+/26+27+
TO-252-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
SINO-MICRO
21+ROHS
TO-252
79999
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SINO-MICRO
2325+
TO-252
33000
无敌价格 主销品牌 正规渠道订货 免费送样!!!
询价
更多JCS5N60FC-O-F-N-B供应商 更新时间2024-5-22 11:36:00