600V N-Channel MOSFET

Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi

文件：947.92 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：364.66 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，4.6 A，950 mΩ，IPAK

SuperFET® MOSFET 是安森美半导体的第一代高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此技术专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET MOSFET 非常适用于开关电源应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。 •650 V @ TJ = 150°C\n•典型值 RDS(on) = 810 mΩ\n•超低栅极电荷（典型值 Qg = 16 nC)\n•低有效输出电容（典型值 Coss(eff.) = 32 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体