丝印：JCS5N60V；Package：IPAK；MAIN CHARACTERISTICS

文件：1.09548 Mbytes 页数：12 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

文件：409.37 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.07621 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time,low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 4.5A • Dr

文件：97.25 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)