场效应晶体管

Low gate chargeLow CrssFast switching100% avalanche testedImproved dv/dt capabilityRoHS product;

MEI

美格智能

场效应晶体管/MOSFET-大于800V系列

JSMC

华微电子

N-CHANNEL MOSFET

文件：1.01851 Mbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TMOS POWER FET 4.0 AMPERES 800 VOLTS

TMOS E-FET High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with h

文件：195.74 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In a

文件：159.11 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In a

文件：159.11 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉