JCS160N08I

N-CHANNEL MOSFET

APPLICATIONS HighpowerDC/DC convertersandswitch modepowersupplies DCmotorcontrol Automotiveapplications Uninterruptiblepower supply FEATURES Lowgatecharge LowRdson(typical4.3mΩ) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSprod

JCS160N08I-S-A

N-CHANNEL MOSFET

APPLICATIONS HighpowerDC/DC convertersandswitch modepowersupplies DCmotorcontrol Automotiveapplications Uninterruptiblepower supply FEATURES Lowgatecharge LowRdson(typical4.3mΩ) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSprod

JCS160N08I-S-AR

N-CHANNEL MOSFET

APPLICATIONS HighpowerDC/DC convertersandswitch modepowersupplies DCmotorcontrol Automotiveapplications Uninterruptiblepower supply FEATURES Lowgatecharge LowRdson(typical4.3mΩ) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSprod

JCS160N08I-S-B

Marking：JCS160N08；Package：TO-263；N-CHANNEL MOSFET

APPLICATIONS HighpowerDC/DC convertersandswitch modepowersupplies DCmotorcontrol Automotiveapplications Uninterruptiblepower supply FEATURES Lowgatecharge LowRdson(typical4.3mΩ) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSprod

JCS160N08I-S-BR

N-CHANNEL MOSFET

APPLICATIONS HighpowerDC/DC convertersandswitch modepowersupplies DCmotorcontrol Automotiveapplications Uninterruptiblepower supply FEATURES Lowgatecharge LowRdson(typical4.3mΩ) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSprod

AJCS160N08I

N-CHANNELMOSFET

APPLICATIONS HighpowerDC/DC convertersandswitch modepowersupplies DCmotorcontrol Automotiveapplications Uninterruptiblepower supply FEATURES ComplywithAECQ101standard Lowgatecharge LowRdson Fastswitching 100%avalanchetested Improveddv/dtcapab

AJCS160N08I-C-B

N-CHANNELMOSFET

APPLICATIONS HighpowerDC/DC convertersandswitch modepowersupplies DCmotorcontrol Automotiveapplications Uninterruptiblepower supply FEATURES ComplywithAECQ101standard Lowgatecharge LowRdson Fastswitching 100%avalanchetested Improveddv/dtcapab

CEB160N08S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 80V,152A,RDS(ON)=3.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CEP160N08S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 80V,152A,RDS(ON)=3.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

FQA160N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=160A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv