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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IXFK110N07	文件：328.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=110A@TC=25℃ ·DrainSourceVoltage- :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK110N07	文件：156.88 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching	IXYS IXYS Corporation	IXYS

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功能描述/丝印

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LOGO

IXFK110N07

文件：328.33 Kbytes

Page：2 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=110A@TC=25℃ ·DrainSourceVoltage- :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFK110N07

文件：156.88 Kbytes

Page：4 Pages

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching

IXYS

IXYS Corporation

IXYS

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