场效应晶体管/MOSFET-200V以下系列

JSMC

华微电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 70V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：328.33 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching

文件：156.88 Kbytes 页数：4 Pages

IXYS

艾赛斯

吉林华微
TO-220F

吉林华微

上传：深圳市乐创天科技有限公司

吉林华微
TO-220F

吉林华微

上传：深圳市乐创天科技有限公司