PNP POWER SILICON TRANSISTOR

PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545

文件：178.59 Kbytes 页数：4 Pages

MICROSEMI

美高森美

PNP Silicon Power -80V, -2A

This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each e The device package outlines are as follows: similar to TO-205 and and surfacemount U3 for all encapsulated device types. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/545.;

Microchip

微芯科技

Package：TO-205AD，TO-39-3 金属罐；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 50UA TO39

MICROCHIP

微芯科技

PNP POWER SILICON TRANSISTOR

PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545

文件：178.59 Kbytes 页数：4 Pages

MICROSEMI

美高森美

PNP POWER SILICON TRANSISTOR

PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545

文件：178.59 Kbytes 页数：4 Pages

MICROSEMI

美高森美

PNP Silicon Power -80V, -2A

This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each e The device package outlines are as follows: similar to TO-205 and and surfacemount U3 for all encapsulated device types. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/545.;

Microchip

微芯科技

DIODE

MACOM

Package：TO-205AA，TO-5-3 金属罐；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 2A TO5

MICROCHIP

微芯科技

Package：TO-205AD，TO-39-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

MICROCHIP

微芯科技