IXTT12N150HV-TRL数据表ic资料市场行情IXYS-114ic电子网

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IXTH12N150	文件：367.96 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH12N150	文件：124.27 Kbytes Page：4 Pages	N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode HighVoltagePowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •MoldingEpoxiesWeetUL94V-0FlammabilityClassification •FastIntrinsicDiode •LowPackageInductance Advantages •EasytoMount •SpaceSavings •	IXYS IXYS Corporation	IXYS
IXTT12N150	文件：124.27 Kbytes Page：4 Pages	N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode HighVoltagePowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •MoldingEpoxiesWeetUL94V-0FlammabilityClassification •FastIntrinsicDiode •LowPackageInductance Advantages •EasytoMount •SpaceSavings •	IXYS IXYS Corporation	IXYS
IXTT12N150HV	文件：148.28 Kbytes Page：4 Pages	N-ChannelEnhancementModeFastIntrinsicDiode	IXYS IXYS Corporation	IXYS

更多IXTT12N150HV-TRL供应商更新时间2024-9-23 14:13:00