Standard Power MOSFET

Standard Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

文件：104.91 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：303.09 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

Standard Power MOSFET

Standard Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

文件：104.91 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies FEATURES Planar MOS Low gate charge Low Crss (typical 40pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

文件：1.06541 Mbytes 页数：13 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N-CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies FEATURES Planar MOS Low gate charge Low Crss (typical 40pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

文件：1.06541 Mbytes 页数：13 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司