N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages;

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated

文件：146.94 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated

文件：301 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated

文件：301 Kbytes 页数：5 Pages

IXYS

艾赛斯