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5N60K-MT

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

5N60L

4.5Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC5N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplication

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

5N60P

N-CHANNELPOWERMOSFET

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

5N60T

N-CHANNELPOWERMOSFET

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

5N60Z

5A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

AOT5N60

600V,5AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT5N60

600V,5AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT5N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BLV5N60

N-channelEnhancementModePowerMOSFET

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

BRD5N60

N-CHANNELMOSFETinaTO-252PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

BRF5N60

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FCD5N60

600VN-ChannelMOSFET

Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD5N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.6A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCD5N60TF

600VN-ChannelMOSFET

Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD5N60TM

600VN-ChannelMOSFET

Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD5N60TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD5N60TM-WS

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCU5N60

600VN-ChannelMOSFET

Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCU5N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.6A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCU5N60TU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    IXTA5N60P

  • 功能描述:

    MOSFET 5.0 Amps 600 V 1.6 Ohm Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
23+
TO-263
12300
全新原装真实库存含13点增值税票!
询价
IXYS/艾赛斯
17+
TO-263
31518
原装正品 可含税交易
询价
IXYS
08+(pbfree)
TO-263
8866
询价
IXYS
23+
TO-263
9500
专业优势供应
询价
IXYS
23+
TO-263-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
IXYS
20+
TO-263-3
90000
全新原装正品/库存充足
询价
IXYS
2020+
TO-263
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
NXP/恩智浦
23+
QFN16
69820
终端可以免费供样,支持BOM配单!
询价
IXYS
1931+
N/A
18
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询价
IXYS
1809+
TO-263
1675
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询价
更多IXTA5N60P供应商 更新时间2024-5-30 15:30:00