HiPerFAST IGBT

Features • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications •

文件：35.54 Kbytes 页数：2 Pages

IXYS

艾赛斯

IGBT

DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · AC motor speed contro · Uninterruptible power supplies (UPS) · DC choppers

文件：327.74 Kbytes 页数：2 Pages

ISC

无锡固电

Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 48A 150W TO247

IXYS

艾赛斯

HiPerFAST IGBT

Features • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications •

文件：35.54 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFASTTM IGBT with Diode

Features • International standard package JEDEC TO-247 AD • High frequency IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast RecoveryEpitaxial Diode (FRED) - so

文件：37.91 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Speed IGBT

VCES = 600 V IC25 = 48 A VCE(sat) = 2.5 V tfi typ = 170 ns Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplic

文件：107.58 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Speed IGBT

VCES = 600 V IC25 = 48 A VCE(sat) = 2.5 V tfi typ = 170 ns Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplic

文件：107.58 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFASTTM IGBT with Diode

Features • International standard package JEDEC TO-247 AD • High frequency IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast RecoveryEpitaxial Diode (FRED) - so

文件：37.91 Kbytes 页数：2 Pages

IXYS

艾赛斯

Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特