N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface

N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface Features • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation • 3rd generation CoolMOS™ 1) power MOSFET - high

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CoolMOS Power MOSFET ISO264

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Advanced Technical Information CoolMOS Power MOSFETin ISOPLUS247 Package

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HiPerFET Power MOSFETs

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HiPerFETTM Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic

文件：162.51 Kbytes 页数：4 Pages

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HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic

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