PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

HiPerFASTTM IGBT with Diode

C2-Class High Speed IGBTs Features • Very high frequency IGBT and anti-parallel FRED in one package • Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-

文件：620.36 Kbytes 页数：5 Pages

IXYS

艾赛斯

Package：TO-247-3 变式；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 480W PLUS247

IXYS

艾赛斯

HiPerFASTTM IGBT with Diode

C2-Class High Speed IGBTs Features • Very high frequency IGBT and anti-parallel FRED in one package • Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-

文件：620.36 Kbytes 页数：5 Pages

IXYS

艾赛斯

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

文件：156.6 Kbytes 页数：5 Pages

IXYS

艾赛斯

Lightspeed 2TM Series (Electrically Isolated Back Surface)

Features • DCB Isolated mounting tab • Meets TO-247AD package Outline • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode p

文件：612.54 Kbytes 页数：6 Pages

IXYS

艾赛斯