isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=64A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =96mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：368.29 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHVTM HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features) ● International standard packages ● Fast recovery diode ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High

文件：175.56 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Diode ● Low QG ● Low RDS(on) ● Low Drain-to-Tab Capacitance ● Low Package Inductance Advantages ● Easy to Mount ● Space Savings Applications ● DC-DC Con

文件：131.82 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 64A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =100mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：2.41922 Mbytes 页数：8 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 64A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 95mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · PFC Circuits · AC and DC Motor Drives

文件：702.49 Kbytes 页数：8 Pages

ISC

无锡固电

HiperFET Power MOSFETs Q3-Class

文件：132.96 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

文件：132.96 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET MOSFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

N通道HiPerFET MOSFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

N通道HiPerFET

• 每个硅片面积的Rdson较低\n• 较低的Qg和Qgd\n• 卓越的dV/dt性能\n• 高速开关\n• 快速本征整流器\n• 较低的本征栅极电阻\n• 较高的雪崩能量性能\n• 卓越的热性能;

Littelfuse

力特