PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density

文件：176.36 Kbytes 页数：5 Pages

IXYS

艾赛斯

PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density

文件：176.36 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

12A, 800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand h

文件：202.23 Kbytes 页数：6 Pages

UTC

友顺

800V N-Channel Planar MOSFET

Features RDSON=0.64Ω @Vgs=10V, Id=6A Low gate Charge(typical 58.2nC) Low Crss (typical 6.5pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：2.60847 Mbytes 页数：7 Pages

SY

顺烨电子

N-Channel Enhancement Mode MOSFET

文件：229.48 Kbytes 页数：4 Pages

DACO

罡境电子