Polar HiPerFET Power MOSFETs

PolarTM HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Low RDS(on) and QG • Avalanche Rated • Low Package Inductance • Fast Intrinsic Rectifier Advantages • High Power Density • Easy to Mount • Space Savings Applications • Switc

文件：181.15 Kbytes 页数：4 Pages

IXYS

艾赛斯

Polar HiPerFET Power MOSFETs

PolarTM HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Low RDS(on) and QG • Avalanche Rated • Low Package Inductance • Fast Intrinsic Rectifier Advantages • High Power Density • Easy to Mount • Space Savings Applications • Switc

文件：181.15 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特