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IXFE48N50Q	文件：559.15 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastintrins	IXYS IXYS Integrated Circuits Division	IXYS
IXFH48N50	文件：93.51 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFK48N50	文件：93.51 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFK48N50	文件：114.27 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process UnclampedInductiveSwitching(UIS	IXYS IXYS Integrated Circuits Division	IXYS
IXFK48N50	文件：328.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK48N50Q	文件：329.25 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK48N50Q	文件：48.2 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS HiPerFET™PowerMOSFETsQ-CLASSSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQgHighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on)	IXYS IXYS Integrated Circuits Division	IXYS
IXFN48N50	文件：93.51 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFN48N50	文件：594.06 Kbytes Page：3 Pages	N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage -VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·Synchronousrectification ·Batterychargers ·Switched-modeandresonant-modepowersupplies	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFN48N50	文件：114.27 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process UnclampedInductiveSwitching(UIS	IXYS IXYS Integrated Circuits Division	IXYS
IXFN48N50Q	文件：572.32 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class	IXYS IXYS Integrated Circuits Division	IXYS
IXFN48N50Q	文件：80.52 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •UnclampedInductiveSwitching(UIS)rated •LowRDS(on) •Fastintrinsicdiode •Internationalst	IXYS IXYS Integrated Circuits Division	IXYS
IXFR48N50Q	文件：58.57 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247Q-Class HiPerFET™PowerMOSFETsISOPLUS247™,Q-Class(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation	IXYS IXYS Integrated Circuits Division	IXYS
IXFR48N50Q	文件：540.23 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsISOPLUS247,Q-Class	IXYS IXYS Integrated Circuits Division	IXYS
IXFX48N50	文件：368.02 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX48N50Q	文件：581.16 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-CLASS	IXYS IXYS Integrated Circuits Division	IXYS
SMOS48N50	文件：181.78 Kbytes Page：2 Pages	POWERMOSFETS	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
SMOS48N50	文件：187.35 Kbytes Page：2 Pages	PowerMOSFETs	SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司	SIRECTIFIER

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	IXFR48N50Q功率三极管	IXYS/艾赛斯	23+	TO247	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	IXFR48N50Q功率三极管	IXYS/艾赛斯	2022	TO247	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科芯源微电子有限公司	IXFR48N50Q功率三极管	IXYS/艾赛斯	24+	TO247	58000	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
京海半导体(深圳)有限公司	IXFR48N60	IXYS/艾赛斯	21+	TO-247	10000	原装现货假一罚十	询价
深圳市得捷芯城科技有限公司	IXFR48N60	IXYS/艾赛斯	23+	NA/	3280	原装现货,当天可交货,原型号开票	询价
深圳市昊创电子有限公司	IXFR48N60P	IXYS艾赛斯	1624+	TO-247	1552	代理品牌	询价
深圳兆威电子有限公司	IXFR48N60P	VB	2019	ISOPLUS247	55000	绝对原装正品假一罚十!	询价
深圳市宏捷佳电子科技有限公司	IXFR48N60P	IXYS	23+	ISOPLUS247	12300	全新原装真实库存含13点增值税票!	询价
深圳市艾宇欣科技有限公司	IXFR48N60P	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IXFR48N60P	IXYS	1809+	TO-247	326	就找我吧!--邀您体验愉快问购元件!	询价

更多IXFR48N50Q功率三极管供应商更新时间2024-6-21 11:00:00

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