HiPerFET Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrins

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IXYS

艾赛斯

Buck & Boost Configurations for PFC & Motor Control Circuits

Buck & Boost Configurations for PFC & Motor Control Circuits Features • Popular Buck & Boost circuit topologies •Conforms to SOT-227B outline •Isolation voltage 3000 V~ •Low RDS(on) HDMOS™ process •Rugged polysilicon gate cell structure •Low drain-to-case capacit

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IXYS

艾赛斯

Buck & Boost Configurations for PFC & Motor Control Circuits

Buck & Boost Configurations for PFC & Motor Control Circuits Features • Popular Buck & Boost circuit topologies •Conforms to SOT-227B outline •Isolation voltage 3000 V~ •Low RDS(on) HDMOS™ process •Rugged polysilicon gate cell structure •Low drain-to-case capacit

文件：546.26 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

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Boost and Buck Configurations

·Vdss: 45V - 600V, Id(25): 21A - 150A \n·Very Low Rds(on): 3.8 mOhms\n·dv/dt ruggedness. Fast reverse diode\n·low inductive current path\n·Kelvin source terminals for easy drive\n·2500 V rms Isolation with ceramic base plate;

Littelfuse

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