IXFE48N50Q

HiPerFET Power MOSFETs Q-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastintrins

IXFE48N50QD2

Buck & Boost Configurations for PFC & Motor Control Circuits

Buck&BoostConfigurationsforPFC&MotorControlCircuits Features •PopularBuck&Boostcircuittopologies •ConformstoSOT-227Boutline •Isolationvoltage3000V~ •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Lowdrain-to-casecapacit

IXFE48N50QD3

Buck & Boost Configurations for PFC & Motor Control Circuits

Buck&BoostConfigurationsforPFC&MotorControlCircuits Features •PopularBuck&Boostcircuittopologies •ConformstoSOT-227Boutline •Isolationvoltage3000V~ •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Lowdrain-to-casecapacit

IXFH48N50

HiPerFETPowerMOSFETs

IXFK48N50

HiPerFETPowerMOSFETs

IXFK48N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process
UnclampedInductiveSwitching(UIS

IXFK48N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFK48N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFK48N50Q

HiPerFETPowerMOSFETsQ-CLASS

HiPerFET™PowerMOSFETsQ-CLASSSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQgHighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on)

IXFN48N50

HiPerFETPowerMOSFETs

IXFN48N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process
UnclampedInductiveSwitching(UIS

IXFN48N50

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage -VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·Synchronousrectification ·Batterychargers ·Switched-modeandresonant-modepowersupplies

IXFN48N50Q

HiPerFETPowerMOSFETsQ-Class

IXFN48N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •UnclampedInductiveSwitching(UIS)rated •LowRDS(on) •Fastintrinsicdiode •Internationalst

IXFR48N50Q

HiPerFETPowerMOSFETsISOPLUS247Q-Class

HiPerFET™PowerMOSFETsISOPLUS247™,Q-Class(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation

IXFR48N50Q

HiPerFETPowerMOSFETsISOPLUS247,Q-Class

IXFX48N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

IXFX48N50Q

HiPerFETPowerMOSFETsQ-CLASS

SMOS48N50

POWERMOSFETS

SMOS48N50

PowerMOSFETs