isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 110mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Polar3 HiperFET Power MOSFET

VDSS = 500V ID25 = 60A RDS(on) ≤ 100mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount •

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IXYS

艾赛斯

N通道HiPerFET MOSFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

HIGH CURRENT MOSIGBT

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

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IXYS

艾赛斯

AlN Flanged Terminations

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ANAREN

AlN Flanged Terminations

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ANAREN