IXFR120N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

IXFR120N20

PowerMOSFET

IXFR120N20

HiPerFETTMPowerMOSFETsISOPLUS247

HiPerFET™PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •SiliconChiponDirect-CopperBond(DCB)Substrate •IsolatedMountingSurface •2500V~ElectricalIsolation •AvalancheRated •FastIntrinsicRectifier •Lo

IXFX120N20

HiPerFETPowerMOSFETs

SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio

IXFX120N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

IXTK120N20P

iscN-ChannelMOSFETTransistor

IXTK120N20P

N-ChannelEnhancementModeAvalancheRated

IXTQ120N20P

N-ChannelEnhancementModeAvalancheRated

IXTQ120N20P

iscN-ChannelMOSFETTransistor

RCJ120N20

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainSourceVoltage-:VDSS=200V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS)

RCJ120N20

Nch200V12APowerMOSFET

RCX120N20

10VDriveNchMOSFET

RCX120N20

iscN-ChannelMOSFETTransistor

SDD120N20B

Diode-DiodeModules