isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 88mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

Features • Double metal process for low gate resistance • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density

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IXYS

艾赛斯

HiPerFET Power MOSFETs Q-Class

Features • Double metal process for low gate resistance • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density

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IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

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