IXFK60N55

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=88mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

IXFK60N55Q2

HiPerFET Power MOSFETs Q-Class

Features •Doublemetalprocessforlowgateresistance •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •Avalancheenergyandcurrentrated •FastintrinsicRectifier Advantages •Easytomount •Spacesavings •Highpowerdensity

IXFK60N55Q2

HiPerFET Power MOSFETs Q-Class

Features •Doublemetalprocessforlowgateresistance •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •Avalancheenergyandcurrentrated •FastintrinsicRectifier Advantages •Easytomount •Spacesavings •Highpowerdensity

CEW60N55S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 550V,60A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. RoHScompliant.

IXFX60N55

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=88mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

STD60N55

N-channel55V-8.0m??-65A-DPAK-IPAKMDmesh??lowvoltagePowerMOSFET

Description Thisn-channelenhancementmodePowerMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™“strip-basedprocesswithlesscriticalaligmentstepsandthereforearemarkablemanufacturingreproducibility.Theresultingtransistorshowsextremelyhighpackin