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IXFK52N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.115Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK52N60Q2

Advanced Technical Information

HiPerFET™PowerMOSFETsQ2-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg LowintrinsicRg,lowtrr Features •Doublemetalprocessforlowgateresistance •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •Avalancheenergyandcur

IXYS

IXYS Integrated Circuits Division

IXFK52N60Q2_08

HiPerFET Power MOSFETs Q2-Class

IXYS

IXYS Integrated Circuits Division

IXFX52N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=115mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IXFK52N60

  • 功能描述:

    MOSFET 52 Amps 600V 0.12 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
08+(pbfree)
TO-264
8866
询价
IXYS
23+
NA
19960
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询价
IXYS
23+
TO-264
12300
全新原装真实库存含13点增值税票!
询价
IXYS
18+
TO-3PL
2050
公司大量全新原装 正品 随时可以发货
询价
IXYS
23+
TO-3PL
267
询价
IXYS
1931+
N/A
18
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询价
IXYS/艾赛斯
23+
TO-264
90000
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询价
IXYS
1809+
TO-264
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS/艾赛斯
21+
TO-264
10000
原装现货假一罚十
询价
更多IXFK52N60供应商 更新时间2024-6-22 15:30:00