isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：329.02 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.7 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHV HiPerFET Power MOSFET

文件：167.41 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode

文件：129.789 Kbytes 页数：6 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 雪崩评级\n• 较低的QG和RDS(on)\n• 较低的封装电感;

Littelfuse

力特

N通道HiPerFET MOSFET

• 每个硅片面积的Rdson较低\n• 较低的Qg和Qgd\n• 卓越的dV/dt性能\n• 高速开关\n• 快速本征整流器\n• 较低的本征栅极电阻\n• 较高的雪崩能量性能\n• 卓越的热性能;

Littelfuse

力特