isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：329.08 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：328.39 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.32Ω(Max)@VGS= 10V · Fast-recovery body diode APPLICATIONS · DC-DC Converters · AC and DC motor controls · Laser Drivers

文件：575.1 Kbytes 页数：3 Pages

ISC

无锡固电

Polar Power MOSFET HiPerFET

文件：124.23 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiperFET Power MOSFETs Q3-Class

文件：132.92 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

N通道HiPerFET MOSFET

• 每个硅片面积的Rdson较低\n• 较低的Qg和Qgd\n• 卓越的dV/dt性能\n• 高速开关\n• 快速本征整流器\n• 较低的本征栅极电阻\n• 较高的雪崩能量性能\n• 卓越的热性能;

Littelfuse

力特

N通道 超-超级结MOSFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特