HiPerFETTM Power MOSFETs

Features • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) • Molding epoxies meet UL94V-0 flammability classification Advantages • Easy to mount • Space savings • High power density

文件：54.02 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：372.3 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFETTM Power MOSFETs

Features • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) • Molding epoxies meet UL94V-0 flammability classification Advantages • Easy to mount • Space savings • High power density

文件：54.02 Kbytes 页数：2 Pages

IXYS

艾赛斯