HIPER FET POWER MOSFETS Q CLASS

文件：154.74 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：371.77 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：94.17 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- VDSS= 100V(Min) ·Static Drain-Source On-Resistance - RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：275.5 Kbytes 页数：2 Pages

ISC

无锡固电