HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：82.12 Kbytes 页数：4 Pages

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：372.09 Kbytes 页数：2 Pages

ISC

无锡固电

Polar Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Avalanche rated • Low package inductance Advantages • Easy to mount • Space savings • High power density Applications: • Switched-mode and resonant-mode pow

文件：183.7 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFETTM Power MOSFETs Q Class

Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ●

文件：146.65 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：372.03 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：164.95 Kbytes 页数：6 Pages

IXYS

艾赛斯

Power MOSFET

文件：164.95 Kbytes 页数：6 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特