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IXFC80N08

HIPERFET-TM MOSFET ISOPLUS220-TM

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

文件:75.16 Kbytes 页数:2 Pages

IXYS

艾赛斯

IXFC80N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件:323.35 Kbytes 页数:2 Pages

ISC

无锡固电

IXFC80N08

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface

● Silicon chip on Direct-Copper-Bond substrate\n   - High power dissipation\n   - Isolated mounting surface\n   - 2500V electrical isolation\n● Low drain to tab capacitance(<35pF)\n● Low RDS (on)\n● Rugged polysilicon gate cell structure\n● Unclamped Inductive Switching (UIS) rated\n● Fast intrinsic;

Littelfuse

力特

IXFC80N085

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件:323.37 Kbytes 页数:2 Pages

ISC

无锡固电

IXFC80N085

HIPERFET-TM MOSFET ISOPLUS220-TM

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

文件:75.16 Kbytes 页数:2 Pages

IXYS

艾赛斯

IXFC80N085

HiPerFET MOSFET ISOPLUS220

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

文件:530.81 Kbytes 页数:2 Pages

IXYS

艾赛斯

IXFC80N085

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

技术参数

  • Package Style:

    ISOPLUS220™

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-220
5000
全现原装公司现货
询价
IXYS
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
IXYS/艾赛斯
21+
TO-220
10000
原装现货假一罚十
询价
IXYS
22+
ISOPLUS220?
9000
原厂渠道,现货配单
询价
IXYS/艾赛斯
23+
ISOPLUSTO-220
5000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
IXYS
2022+
ISOPLUS220?
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS
23+
TO-220
60601
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
IXYS
23+
TO-220
8000
只做原装现货
询价
IXYS/艾赛斯
24+
NA
990000
明嘉莱只做原装正品现货
询价
IXYS
23+
TO-220
7000
询价
更多IXFC80N08供应商 更新时间2025-12-8 10:19:00