首页 >IXFC16N80P>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IXFC16N80P | PolarHV HiPerFET Power MOSFET ISOPLUS220 N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance( 文件:207.66 Kbytes 页数:2 Pages | IXYS 艾赛斯 | IXYS | |
IXFC16N80P | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件:324.09 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IXFC16N80P | N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) ·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types; | Littelfuse 力特 | Littelfuse | |
PolarHV Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features Fast Recovery diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings 文件:207.45 Kbytes 页数:5 Pages | IXYS 艾赛斯 | IXYS | ||
PolarHV Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features Fast Recovery diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings 文件:207.45 Kbytes 页数:5 Pages | IXYS 艾赛斯 | IXYS | ||
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM TMOS E−FET Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi 文件:239.48 Kbytes 页数:8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA |
技术参数
- Package Style:
ISOPLUS220™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IXYS |
22+ |
ISOPLUS220? |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
2022+ |
ISOPLUS220? |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
原装正品 |
23+ |
TO-220 |
60425 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IXYS(艾赛斯) |
25+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
询价 | ||
IXYS |
21+ |
TO-220铁头 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IXYS |
25+ |
TO-220铁头 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
IXYS |
23+ |
TO-220铁头 |
50 |
全新原装正品现货,支持订货 |
询价 | ||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
IXYS |
25+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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