High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • International Standard Packages • Low Conduction Losses • High Current Handling Capability • MOS Gate Turn-On - Drive Simplicity Advantages • Easy to Mount • Space Savings • High Power Density Applications • Uninterruptible Power Supplies (UPS) • Swit

文件：221.5 Kbytes 页数：6 Pages

IXYS

艾赛斯

BiMOSFET™ 超高电压

• “自由”本征体二极管\n• 高功率密度\n• 高频运行\n• 低传导损耗\n• MOS栅极开启简单便捷\n• 4000V电气绝缘;

Littelfuse

力特

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 3000V 130A 625W TO264

IXYS

艾赛斯

High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • International Standard Packages • Low Conduction Losses • High Current Handling Capability • MOS Gate Turn-On - Drive Simplicity Advantages • Easy to Mount • Space Savings • High Power Density Applications • Uninterruptible Power Supplies (UPS) • Swit

文件：221.5 Kbytes 页数：6 Pages

IXYS

艾赛斯