BiMOSFET™ 高电压

• 高阻断电压\n• 高功率密度\n• 高电流处理能力\n• 低传导损耗\n• MOS栅极开启简单便捷\n• 国际标准和专有ISOPLUSTM封装;

Littelfuse

力特

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl

文件：51.85 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1700V 16A 150W TO247AD

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninter

文件：182.04 Kbytes 页数：5 Pages

IXYS

艾赛斯

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl

文件：51.85 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Voltage Package • High Blocking Voltage • Anti-Parallel Diode • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Ca

文件：168.96 Kbytes 页数：2 Pages

IXYS

艾赛斯