BiMOSFETTM Monolithic Bipolar MOS Transistor High Voltage, High Frequency

Features ● Silicon Chip on Direct-Copper Bond (DCB) Substrate ● Isolated Mounting Surface ● 4000V~ Electrical Isolation ● High Blocking Voltage ● High Frequency Operation Advantages ● Low Gate Drive Requirement ● High Power Density Applications ● Switch-Mode and Resonant-Mode Power Suppl

文件：208.32 Kbytes 页数：6 Pages

IXYS

艾赛斯

BiMOSFET™ 超高电压

• “自由”本征体二极管\n• 高功率密度\n• 高频运行\n• 低传导损耗\n• MOS栅极开启简单便捷\n• 4000V电气绝缘;

Littelfuse

力特

Package：i4-Pac™-5（3 引线）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 3600V 70A 290W I4-PAK

IXYS

艾赛斯

BiMOSFET Monolithic Bipolar MOS Transistor High Voltage, High Frequency

Features ● High Blocking Voltage ● High Voltage Package ● Low Conduction Losses Advantages ● Easy to Mount ● Space Savings ● High Power Density Applications ● Uninterruptible Power Supplies (UPS) ● Switch-Mode and Resonant-Mode Power Supplies ● Capacitor Discharge Circuits ● Laser Gene

文件：241.63 Kbytes 页数：6 Pages

IXYS

艾赛斯