High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor

Features ● Silicon Chip on Direct-Copper Bond (DCB) Substrate ● Isolated Mounting Surface ● 4000V~ Electrical Isolation ● High Blocking Voltage ● High Frequency Operation Advantages ● Low Gate Drive Requirement ● High Power Density Applications ● Switch-Mode and Resonant-Mode Power Suppl

文件：227.93 Kbytes 页数：6 Pages

IXYS

艾赛斯

BiMOSFET™ 超高电压

• “自由”本征体二极管\n• 高功率密度\n• 高频运行\n• 低传导损耗\n• MOS栅极开启简单便捷\n• 4000V电气绝缘;

Littelfuse

力特

Package：i4-Pac™-5（3 引线）；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 3600V 45A ISOPLUS I4PAK

IXYS

艾赛斯

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Voltage Packages • High Blocking Voltage • High Peak Current Capability • Low Saturation Voltage Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Genera

文件：286.11 Kbytes 页数：6 Pages

IXYS

艾赛斯

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Voltage Packages • High Blocking Voltage • High Peak Current Capability • Low Saturation Voltage Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Genera

文件：286.11 Kbytes 页数：6 Pages

IXYS

艾赛斯