HVMOS

IPS

华润芯

TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

文件：280.19 Kbytes 页数：10 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：297.73 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：318.98 Kbytes 页数：2 Pages

ISC

无锡固电