首页 >IT6635>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

FDD6635

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=59A@TC=25℃ ·DrainSourceVoltage :VDSS=35V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6635

35VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeenproducedusingFairchildSemiconductor’sproprietaryPowerTrenchtechnologytodeliverlowRdsonandoptimizedBvdsscapabilitytooffersuperiorperformancebenefitintheapplications. Features •59A,35VRDS(ON)=10mΩ@VGS=10VRDS(ON

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF6635

DirectFETPowerMOSFET

Description TheIRF6635combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeo

IRF

International Rectifier

IRF6635PBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635TRPBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635TRPBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635TRPBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

MAX6635

12-BitPlusSignTemperatureSensorswithSMBus/I2C-CompatibleSerialInterface

GeneralDescription TheMAX6633/MAX6634/MAX6635combineatemperaturesensor,aprogrammableovertemperaturealarm,andanSMBus/I2C-compatibleserialinterfaceintoasinglepackage. Features ●+3Vto+5.5VSupplyRange ●Accuracy   ±1°Cmax(0°Cto+50°C)   ±1.5°Cmax(-20°Cto+85°C)  

MaximMaxim Integrated Products

美信美信半导体

供应商型号品牌批号封装库存备注价格
ITE
19+
LQFP128
9600
原装正品现货,可开发票,假一赔十
询价
ITE
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ITE
25+
QFN64
5000
原厂原装,价格优势
询价
ITE/联阳
22+
QFN64
16000
原装正品
询价
270
原装正品老板王磊+13925678267
询价
ITE
24+
QFN
5000
十年沉淀唯有原装
询价
ITE
23+
QFN
20000
询价
ITE
2405+
Original
50000
只做原装优势现货库存,渠道可追溯
询价
ITE
24+
QFN64
39500
进口原装现货 支持实单价优
询价
ITE
24+
QFN
9000
只做原装正品 有挂有货 假一赔十
询价
更多IT6635供应商 更新时间2025-5-18 9:08:00