丝印：75DP06LM；Package：PG-SOT223；OptiMOSTM Small Signal Transistor, -60 V

文件：1.17526 Mbytes 页数：11 Pages

Infineon

英飞凌

OptiMOSTM Small Signal Transistor, -60 V

文件：1.17526 Mbytes 页数：11 Pages

Infineon

英飞凌

常规和逻辑电平的 P 沟道 MOSFET，降低中低功率应用的设计复杂性

OptiMOS™ P-channel 60V MOSFETs in SOT-223 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interfa • Most products qualified to AEC Q101\n• VDS = -60V\n• Wide RDS(on) range\n• Normal Level and Logic Level availability\n\n优势:\n• Easy interface to MCU\n• Improved efficiency at low loads due to low Qg\n• Fast switching\n• Avalanche ruggedness;

Infineon

英飞凌

SOIC-8_150mil

Infineon/英飞凌

上传：深圳市斌能达电子科技有限公司

BGA

LATTICE/莱迪斯

上传：深圳市科之盛科技有限公司