N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mΩ

ONSEMI

安森美半导体

TO220F

ON

上传：深圳市芯立阳电子技术有限公司

TO-252

FAIRCHILD

仙童半导体

上传：深圳市广弘电子有限公司