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TDA8510

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TDA8510J

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TPCP8510

TransistorSiliconNPNEpitaxialType

High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=120to300(IC=0.1A) •Lowcollector-emittersaturation:VCE(sat)=0.14V(max) •High-speedswitching:tf=0.2μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCP8510

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半导体

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半导体

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”.  GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半导体

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半导体

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”.  GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半导体

UFR8510

ULTRAFASTRECOVERYRECTIFIER

MicrosemiMicrosemi Corporation

美高森美美高森美公司

产品属性

  • 产品编号:

    ISL8510IRZ-T

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 线性稳压器控制器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 拓扑:

    降压(1),线性(LDO)(1)

  • 频率 - 开关:

    500kHz

  • 电压/电流 - 输出 1:

    0.6V ~ 20V,1A

  • 电压/电流 - 输出 2:

    0.6V ~ 4.2V,500mA

  • 带 LED 驱动器:

  • 带监控器:

  • 带定序器:

  • 电压 - 供电:

    5V,5.5V ~ 25V

  • 工作温度:

    -40°C ~ 85°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    24-VFQFN 裸露焊盘

  • 供应商器件封装:

    24-QFN(4x4)

  • 描述:

    IC REG DL BUCK/LNR 500KHZ 24QFN

供应商型号品牌批号封装库存备注价格
INTERSIL
24+
65300
一级代理/放心购买!
询价
INTERSIL
2447
QFN24
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
INTERSIL
20+
QFN-24
1001
就找我吧!--邀您体验愉快问购元件!
询价
INTERSIL
23+
QFN24
50000
全新原装正品现货,支持订货
询价
INTERSIL
21+
QFN
10000
原装现货假一罚十
询价
INTERSIL
23+
QFN
9920
原装正品,支持实单
询价
INTERSIL
1314+
QFN24
260
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Renesas
22+
24-VFQFN
9000
原厂渠道,现货配单
询价
INTERSIL
23+
QFN-24
89630
当天发货全新原装现货
询价
INTERSIL
24+
NA/
2998
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多ISL8510IRZ-T供应商 更新时间2025-7-21 14:41:00