Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

Features • Electrically screened to SMD # 5962-07218 • QML qualified per MIL-PRF-38535 requirements • Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)* - SEL immune . . . . . . . . . .

文件：475 Kbytes 页数：11 Pages

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Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

Features • Electrically screened to SMD # 5962-07218 • QML qualified per MIL-PRF-38535 requirements • Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)* - SEL immune . . . . . . . . . .

文件：475 Kbytes 页数：11 Pages

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Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

Features • Electrically screened to SMD # 5962-07218 • QML qualified per MIL-PRF-38535 requirements • Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)* - SEL immune . . . . . . . . . .

文件：475 Kbytes 页数：11 Pages

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抗辐射超高频 NPN/PNP 晶体管阵列

The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a • Electrically screened to SMD # 5962-07218 \n• Radiation tolerance \n• Low dose rate (0.01rad(Si)/s): 50krad(Si)* \n• NPN gain bandwidth product (FT: 8GHz (typ) \n• NPN early voltage (VA): 50V (typ) \n• PNP current gain (hFE): 60 (typ) \n• Noise figure (50Ω) at 1GHz: 3.5dB (typ) \n• Collector-to-co;

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