ISL73040SEHEV4Z中文资料瑞萨数据手册PDF规格书

Features

• Wide operating voltage range of 4.5V to 13.2V

• Up to 14.7V logic inputs (regardless of VDD level)

• Inverting and non-inverting inputs

• Optimized to drive enhancement mode GaN FETs

• Internal 4.5V regulated gate drive voltage

• Independent outputs for adjustable

turn-on/turn-off speeds

• Full military temperature range operation

• TA = -55°C to +125°C

• TJ = -55°C to +150°C

• Radiation acceptance testing - ISL70040SEH

• HDR (50-300rad(Si)/s): 100krad(Si)

• LDR (0.01rad(Si)/s): 75krad(Si)

• Radiation acceptance testing - ISL73040SEH

• LDR (0.01rad(Si)/s): 75krad(Si)

• SEE hardness (see the SEE Report for details)

• No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg

• No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg

• Electrically screened to DLA SMD 5962-17233

Applications

• Flyback and forward converters

• Boost and PFC converters

• Secondary synchronous FET drivers