ISL73033SLHMKZ中文资料瑞萨数据手册PDF规格书

厂商型号	ISL73033SLHMKZ
功能描述	Radiation Hardened Driver-GaN Power Stage with 100V GaN FET
丝印标识	ISL73033SLHMKZ
封装外壳	BGA
文件大小	477.15 Kbytes
页面数量	15 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-29 22:39:00
人工找货	ISL73033SLHMKZ价格和库存，欢迎联系客服免费人工找货

Features

▪ Production testing and qualification follow the

standard AS6294/1

▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate

driver

▪ Wide driver bias range of 4.5V to 13.2V

▪ Up to 16.5V logic inputs (regardless of VDD level)

• Inverting and non-inverting inputs

▪ Integrated driver optimized for enhancement-mode

GaN FETs

• Internal 4.5V regulated gate drive voltage

▪ Full military temperature range operation

• TA = -55°C to +125°C

• TJ = -55°C to +150°C

▪ Radiation hardness assurance (lot-by-lot)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

▪ SEE hardness for Driver (see the SEE test report)

• No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg

• No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg

▪ SEE hardness for GaN FET (see the SEE test

report)

• No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg