丝印：ISL73033SLHMKZ；Package：BGA；Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

文件：477.15 Kbytes 页数：15 Pages

RENESAS

瑞萨

丝印：ISL73033SLHMKZ；Package：BGA；Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

文件：477.15 Kbytes 页数：15 Pages

RENESAS

瑞萨

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

文件：477.15 Kbytes 页数：15 Pages

RENESAS

瑞萨

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

文件：477.15 Kbytes 页数：15 Pages

RENESAS

瑞萨