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ISL70024SEHXSLASHSAMPLE

200V, 7.5A Enhancement Mode GaN Power Transistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL70024SEH

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL70024SEHL/PROTO

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL70024SEHLSLASHPROTO

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL70024SEHML

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL70024SEHMX

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL70024SEHX/SAMPLE

200V,7.5AEnhancementModeGaNPowerTransistor

Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

SI-70024

SI-70024

bel

Bel Fuse Inc.

供应商型号品牌批号封装库存备注价格
RENESAS
22+
SOP
15000
瑞萨全系列在售,大代理渠道直供
询价
RENESAS
22+
SOP
6000
专业配单,原装正品假一罚十,代理渠道价格优
询价
RENESAS
两年内
N/A
35
原装现货,实单价格可谈
询价
Intersil
18+
N/A
85600
保证进口原装可开17%增值税发票
询价
INTERSI
24+
N/A
90000
一级代理商进口原装现货、价格合理
询价
INTERSI
2016+
CDIP-8
250
原装正品,诚信经营
询价
N/A
23+
80000
专注配单,只做原装进口现货
询价
21+
N/A
7161
全新原装亏本出
询价
INTERSIL
2016+
TSOP-5
6000
全新原装现货,量大价优,公司可售样!
询价
Intersil
24+
64-TQFP-EP(10x10)
65200
一级代理/放心采购
询价
更多ISL70024SEHXSLASHSAMPLE供应商 更新时间2025-5-5 9:02:00