首页 >ISL70040SEH>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ISL70040SEH | Radiation Hardened Low-Side GaN FET Driver Features •Wideoperatingvoltagerangeof4.5Vto13.2V •Upto14.7Vlogicinputs(regardlessofVDDlevel) •Invertingandnon-invertinginputs •OptimizedtodriveenhancementmodeGaNFETs •Internal4.5Vregulatedgatedrivevoltage •Independentoutputsforadjustable turn-on/turn-of | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
100V, 60A Enhancement Mode GaN Power Transistor Features •VerylowrDS(ON)5mΩ(typical) •Ultralowtotalgatecharge14nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg •ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoserate | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Radiation Hardened Low-Side GaN FET Driver Features •Wideoperatingvoltagerangeof4.5Vto13.2V •Upto14.7Vlogicinputs(regardlessofVDDlevel) •Invertingandnon-invertinginputs •OptimizedtodriveenhancementmodeGaNFETs •Internal4.5Vregulatedgatedrivevoltage •Independentoutputsforadjustable turn-on/turn-of | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Radiation Hardened Low-Side GaN FET Driver Features •Wideoperatingvoltagerangeof4.5Vto13.2V •Upto14.7Vlogicinputs(regardlessofVDDlevel) •Invertingandnon-invertinginputs •OptimizedtodriveenhancementmodeGaNFETs •Internal4.5Vregulatedgatedrivevoltage •Independentoutputsforadjustable turn-on/turn-of | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40V, 65A Enhancement Mode GaN Power Transistors Features •VerylowrDS(ON)3.5mΩ(typical) •Ultralowtotalgatecharge19nC(typical) •ISL70020SEHradiationacceptancetesting ○Highdoserate(50-300rad(Si)/s):100krad(Si) ○Lowdoserate(0.01rad(Si)/s):75krad(Si) •ISL73020SEHradiationacceptancetesting ○Lowdoserate(0.01rad | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Radiation Hardened Low-Side GaN FET Driver Features •Wideoperatingvoltagerangeof4.5Vto13.2V •Upto14.7Vlogicinputs(regardlessofVDDlevel) •Invertingandnon-invertinginputs •OptimizedtodriveenhancementmodeGaNFETs •Internal4.5Vregulatedgatedrivevoltage •Independentoutputsforadjustable turn-on/turn-of | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Radiation Hardened Low-Side GaN FET Driver Features •Wideoperatingvoltagerangeof4.5Vto13.2V •Upto14.7Vlogicinputs(regardlessofVDDlevel) •Invertingandnon-invertinginputs •OptimizedtodriveenhancementmodeGaNFETs •Internal4.5Vregulatedgatedrivevoltage •Independentoutputsforadjustable turn-on/turn-of | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Radiation Hardened Low-Side GaN FET Driver Features •Wideoperatingvoltagerangeof4.5Vto13.2V •Upto14.7Vlogicinputs(regardlessofVDDlevel) •Invertingandnon-invertinginputs •OptimizedtodriveenhancementmodeGaNFETs •Internal4.5Vregulatedgatedrivevoltage •Independentoutputsforadjustable turn-on/turn-of | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Radiation Hardened Low-Side GaN FET Driver Features •Wideoperatingvoltagerangeof4.5Vto13.2V •Upto14.7Vlogicinputs(regardlessofVDDlevel) •Invertingandnon-invertinginputs •OptimizedtodriveenhancementmodeGaNFETs •Internal4.5Vregulatedgatedrivevoltage •Independentoutputsforadjustable turn-on/turn-of | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Radiation Hardened Low-Side GaN FET Driver Features •Wideoperatingvoltagerangeof4.5Vto13.2V •Upto14.7Vlogicinputs(regardlessofVDDlevel) •Invertingandnon-invertinginputs •OptimizedtodriveenhancementmodeGaNFETs •Internal4.5Vregulatedgatedrivevoltage •Independentoutputsforadjustable turn-on/turn-of | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MICROPHONECABLE1PRAWG24 ProductDescription MICROPHONECABLE1PRAWG24/0.22mm² | BELDEN Belden Inc. | BELDEN | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel100V(D-S)MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel100V(D-S)MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel100V(D-S)MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel100V(D-S)MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel100V(D-S)MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
22+ |
SOP |
15000 |
瑞萨全系列在售,大代理渠道直供 |
询价 | ||
Intersil |
21+ |
监控电路 |
275 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
INTERSIL |
1436+ |
N/A |
30000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
Intersil |
18+ |
N/A |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
INTERSI |
23+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
INTERSIL |
18+ |
200 |
询价 | ||||
INTERSI |
2016+ |
CDIP-8 |
250 |
原装正品,诚信经营 |
询价 | ||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
INTERSIL |
2017+ |
TSOP-5 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
INTERSIL |
2016+ |
TSOP-5 |
6000 |
全新原装现货,量大价优,公司可售样! |
询价 |
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