零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
ISL6622 | VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoringFeatures TheISL6334B,ISL6334Ccontrolmicroprocessorcorevoltageregulationbydrivingupto4interleavedsynchronous-rectifiedbuckchannelsinparallel.Thismultiphasearchitectureresul | Intersil Intersil Corporation | Intersil | |
ISL6622 | VR11.1, 4-Phase PWM Controller with Light Load Efficiency Enhancement and Load Current Monitoring VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoringFeatures TheISL6334,ISL6334Acontrolmicroprocessorcorevoltageregulationbydrivingupto4interleavedsynchronous-rectifiedbuckchannelsinparallel.Thismultiphasearchitectureresult | Intersil Intersil Corporation | Intersil | |
ISL6622 | VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; • Dual MOSFET Drives for Synchronous Rectified Bridge\n• Advanced Adaptive Zero Shoot-through Protection\n• Integrated LDO for Selectable Lower Gate Drive Voltage (5.75V, 6.75V, 7.75V) to Optimize Light Load Efficiency\n• 36V Internal Bootstrap Diode\n• Advanced PWM Protocol (Patent Pending) to Support PSI Mode, Diode Emulation, Three-State Operation\n• Diode Emulation for Enhanced Light Load Efficiency\n• Bootstrap Capacitor Overcharging Prevention\n• Supports High Switching Frequency\n• 3A Sinking Current Capability\n• Fast Rise/Fall Times and Low Propagation Delays\n• Integrated High-Side Gate-to-Source Resistor to Prevent from Self Turn-On due to High Input Bus dV/dt\n• Pre-POR Overvoltage Protection for Start-up and Shutdown\n• Power Rails Undervoltage Protection\n• Expandable Bottom Copper Pad for Enhanced Heat Sinking\n• Dual Flat No-Lead (DFN) Package\n• Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile\n• Pb-Free (RoHS Compliant)\n; The ISL6622 is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6622 is specifically designed to work with Intersil VR11. 1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6622 detects a PSI protocol sent by an Intersil VR11. 1 controller, it activates Diode Emulation (DE) and Gate Voltage Optimization Technology (GVOT) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode. In the 8 Ld SOIC package, the ISL6622 drives the upper and lower gates to VCC during normal PWM mode, while the lower gate drops down to a fixed 5. 75V (typically) during PSI mode. The 10 Ld DFN part offers more flexibility: the upper gate can be driven from 5V to 12V via the UVCC pin, while the lower gate has a resistor-selectable drive voltage of 5. 75V, 6. 75V, and 7. 75V (typically) during PSI mode. This provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. To further enhance light load efficiency, the ISL6622 enables diode emulation operation during PSI mode. This allows Discontinuous Conduction Mode (DCM) by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET to prevent it from sinking current. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6622 has a 20kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. This driver also has an overvoltage protection feature operational while VCC is below the POR threshold: the PHASE node is connected to the gate of the low side MOSFET (LGATE) via a 10kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low side MOSFET, dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted. | RenesasRenesas Technology Corp 瑞萨瑞萨科技有限公司 | Renesas | |
ISL6622 | Dual 4-Phase 1-Phase PWM Controller for VR12/IMVP7 Applications | Intersil Intersil Corporation | Intersil | |
ISL6622 | Dual 6-Phase 1-Phase PWM Controller for VR12/IMVP7 Applications | Intersil Intersil Corporation | Intersil | |
ISL6622 | VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | |
VR11.1, 4-Phase PWM Controller with Light Load Efficiency Enhancement and Load Current Monitoring VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoringFeatures TheISL6334,ISL6334Acontrolmicroprocessorcorevoltageregulationbydrivingupto4interleavedsynchronous-rectifiedbuckchannelsinparallel.Thismultiphasearchitectureresult | Intersil Intersil Corporation | Intersil | ||
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoringFeatures TheISL6334B,ISL6334Ccontrolmicroprocessorcorevoltageregulationbydrivingupto4interleavedsynchronous-rectifiedbuckchannelsinparallel.Thismultiphasearchitectureresul | Intersil Intersil Corporation | Intersil | ||
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers TheISL6622AisahighfrequencyMOSFETdriverdesigned todriveupperandlowerpowerN-ChannelMOSFETsina synchronousrectifiedbuckconvertertopology.Theadvanced PWMprotocolofISL6622Aisspecificallydesignedtowork withIntersilVR11.1controllersandcombinedwith N-ChannelMOSF | Intersil Intersil Corporation | Intersil | ||
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; • Dual MOSFET Drives for Synchronous Rectified Bridge\n• Advanced Adaptive Zero Shoot-Through Protection\n• 36V Internal Bootstrap Schottky Diode\n• Diode Emulation For Enhanced Light Load Efficiency\n• Bootstrap Capacitor Overcharging Prevention\n• Supports High Switching Frequency\n• 3A Sinking Current Capability\n• Fast Rise/Fall Times and Low Propagation Delays\n• Advanced PWM Protocol (Patent Pending) to Support PSI Mode, Diode Emulation, Three-State Operation\n• Pre-POR Overvoltage Protection for Start-up and Shutdown\n• VCC Undervoltage Protection\n• Expandable Bottom Copper Pad for Enhanced Heat Sinking\n• Dual Flat No-Lead (DFN) Package\n• Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile\n• Pb-Free (RoHS Compliant)\n; The ISL6622A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6622A is specifically designed to work with Intersil VR11. 1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6622A detects a PSI protocol sent by an Intersil VR11. 1 controller, it activates Diode Emulation (DE) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode. In the 8 Ld SOIC package, the ISL6622A drives the upper gate to 12V while the lower get can be driven from 5V to 12V. The 10 Ld DFN part allows for more flexibility. The upper gate can be driven from 5V to 12V using the UVCC pin and the lower gate can also be driven from 5V to 12V using the LVCC pin. This provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. To further enhance light load efficiency, the ISL6622A enables diode emulation operation during PSI mode. This allows Discontinuous Conduction Mode (DCM) by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET to prevent it from sinking current. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6622A has a 20kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. This driver adds an overvoltage protection feature operational while VCC is below its POR threshold; the PHASE node is connected to the gate of the low side MOSFET (LGATE) via a 10kΩ resistor limiting the output voltage of the converter close to the gate threshold of the low side MOSFET, dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted. | RenesasRenesas Technology Corp 瑞萨瑞萨科技有限公司 | Renesas |
技术参数
- VDRIVE (V) (V):
5 to 12
- Sink:
1.25
- Sink:
2
- Phase Voltage (Min):
GND - 0.3VDC GND - 8V (<200ns)
- Phase Voltage (Max):
15VDC
- No Load IS (Max):
N/A
- IS (mA):
5.7
- Qualification Level:
Standard
- Lead Count (#):
8
- Pkg. Type:
DFN
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERSIL |
17+ |
SOP |
6200 |
100%原装正品现货 |
询价 | ||
Intersil |
23+ |
8-SOIC |
6672 |
询价 | |||
INC |
24+ |
6 |
询价 | ||||
INTERSIL |
QFN |
3413 |
正品原装--自家现货-实单可谈 |
询价 | |||
INTERSIL |
15+ |
SOP8 |
10000 |
原厂直销 |
询价 | ||
INTERSIL |
2016+ |
QFN |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
INTERSIL |
17+ |
N/A |
9800 |
只做全新进口原装,现货库存 |
询价 | ||
INTERSIL |
24+ |
SOP8 |
1400 |
原装订货6-8周专注经营十五年 |
询价 | ||
INT |
23+ |
NA |
5155 |
专做原装正品,假一罚百! |
询价 | ||
INTERSIL |
25+23+ |
SOP8 |
35032 |
绝对原装正品全新进口深圳现货 |
询价 |
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