32Mb Async/Page/Burst CellularRAM 1.5

Features ⚫ Single device supports asynchronous , page, and burst operation ⚫ Mixed Mode supports asynchronous write and synchronous read operation ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Asynchronous mode

文件：938.48 Kbytes 页数：68 Pages

ISSI

矽成半导体

CellularRAM/Pseudo SRAM

·8Mb,16Mb, 32Mb, and 64Mb densities available\n·Asynchronous, Page, and Burst features supported\n·Low Power Features\n·Industrial and Automotive (-40 to 85°C) Temperature available

ISSI

矽成半导体

静态随机存取存储器 32Mb,Pseudo 静态随机存取存储器,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v~1.95v,54 Ball BGA (6x8 mm), RoHS

ISSI

矽成半导体

Package：54-VFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC PSRAM 32MBIT PARALLEL 54VFBGA

ISSI, Integrated Silicon Solution Inc

Package：54-VFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC PSRAM 32MBIT PARALLEL 54VFBGA

ISSI, Integrated Silicon Solution Inc