64Mb Async/Page PSRAM

Features  Asynchronous and page mode interface  Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95VBLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6VCLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V  Page mode read access InterpageRead access : 60ns, 70ns IntrapageRead access : 25n

文件：902.96 Kbytes 页数：34 Pages

ISSI

矽成半导体

Asynchronous and page mode interface

文件：663.83 Kbytes 页数：32 Pages

ISSI

矽成半导体

64Mb Async/Page PSRAM

Features  Asynchronous and page mode interface  Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95VBLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6VCLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V  Page mode read access InterpageRead access : 60ns, 70ns IntrapageRead access : 25n

文件：902.96 Kbytes 页数：34 Pages

ISSI

矽成半导体

64Mb Async/Page PSRAM

Features  Asynchronous and page mode interface  Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95VBLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6VCLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V  Page mode read access InterpageRead access : 60ns, 70ns IntrapageRead access : 25n

文件：902.96 Kbytes 页数：34 Pages

ISSI

矽成半导体

64Mb Async/Page PSRAM

The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes: Partial Array Refresh mode where data is retai • Asynchronous and page mode interface\r\n• Page mode read access\r\n• Low Power Consumption\r\n• Low Power Feature\r\n• Operating temperature Range\r\n• Packages:\r\n - 48-ball TFBGA;

ISSI

矽成半导体

静态随机存取存储器 64Mb Pseudo 静态随机存取存储器 Asynch/Pg 4Mx16 55ns

ISSI

矽成半导体

静态随机存取存储器 64Mb Pseudo 静态随机存取存储器 Asynch/Pg 4Mx16 55ns

ISSI

矽成半导体

Package：48-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC PSRAM 64MBIT PARALLEL 48TFBGA

ISSI, Integrated Silicon Solution Inc

Package：48-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC PSRAM 64MBIT PARALLEL 48TFBGA

ISSI, Integrated Silicon Solution Inc