32Mb Async/Page PSRAM

Features ⚫ Asynchronous and page mode interface ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Page mode read access  Interpage Read access : 60ns, 70ns  Intrapage Read acce

文件：708.81 Kbytes 页数：33 Pages

ISSI

矽成半导体

Asynchronous and page mode interface

文件：622.96 Kbytes 页数：31 Pages

ISSI

矽成半导体

32Mb Async/Page PSRAM

Features ⚫ Asynchronous and page mode interface ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Page mode read access  Interpage Read access : 60ns, 70ns  Intrapage Read acce

文件：708.81 Kbytes 页数：33 Pages

ISSI

矽成半导体

32Mb Async/Page PSRAM

Features ⚫ Asynchronous and page mode interface ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Page mode read access  Interpage Read access : 60ns, 70ns  Intrapage Read acce

文件：708.81 Kbytes 页数：33 Pages

ISSI

矽成半导体

静态随机存取存储器 32Mb,Pseudo 静态随机存取存储器,Asynch/Page, 2M x 16,70ns,VDD 1.7V~1.95V, VDDQ 1.7V~1.95V,48 Ball BGA (6x8 mm), RoHS

ISSI

矽成半导体

Package：48-TFBGA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC PSRAM 32MBIT PARALLEL 48TFBGA

ISSI, Integrated Silicon Solution Inc

Package：48-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC PSRAM 32MBIT PARALLEL 48TFBGA

ISSI, Integrated Silicon Solution Inc